晶湛半导体

Multi-channel nanowire devices for efficient power conversion L. Nela, J. Ma, C. Erine, P. Xiang, T.-H. Shen, V. Tileli, T. Wang, K. Cheng & E. Matioli

Nature Electronics 2021

Regrowth-Free GaN-Based Complementary Logic on a Si Substrate N. Chowdhury, Q. Xie, M. Yuan, K. Cheng, H. W. Then and T. Palacios,

IEEE Electron Device Letters, vol. 41, no. 6, pp. 820-823, June 2020

GaN Nanowire Field Emitters with a Self-Aligned Gate Process P. Shih et al.,

2020 Device Research Conference (DRC), Columbus, OH, USA, 2020, pp. 1-2

Demonstration of a 2 kV Al0.85Ga0.15N Schottky Barrier Diode with Improved On-Current and Ideality Factor Zhang, Yanni; Zhang, Jincheng; Liu, Zhihong; Xu, Shengrui; Cheng, Kai; Ning, Jing; Zhang, Chunfu; Zhang, Lei; Ma, Peijun; Zhou, Hong

IEEE Electron Device Letters, vol. 41, no. 3, pp. 457-460, March 2020

Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN Xiao, Ming; Du, Zhonghao; Xie, Jinqiao; Beam, Edward; Yan, Xiaodong; Cheng, Kai; Wang, Han; Cao, Yu; Zhang, Yuhao;

Appl. Phys. Lett. 116, 053503 (2020)

Approach to Single-Mode Dominated Resonant Emission in GaN-Based Square Microdisks on Si Liu, Meng-Han; Chen, Peng; Xie, Zi-Li; Xiu, Xiang-Qian; Chen, Dun-Jun; Liu, Bin; Han, Ping; Shi, Yi; Zhang, Rong; Zheng, You-Dou; Cheng, Kai; Zhang, Liyang;

2020 Chinese Phys. Lett. 37 054204

High-efficiency photon–electron coupling resonant emission in GaN-based microdisks on Si Liu, Menghan; Chen, Peng; Xie, Zili; Xiu, Xiangqian; Chen, Dunjun; Liu, Bin; Han, Ping; Shi, Yi; Zhang, Rong; Zheng, Youdou; Cheng, Kai; Zhang, Liyang;

2020 Chinese Physics B 29 084203

Conformal passivation of Multi-Channel GaN power transistors for reduced current collapse Nela, Luca; Yildirim, Halil Kerim; Erine, Catherine; Van Erp, Remco; Xiang, Peng; Cheng, Kai; Matioli, Elison

IEEE Electron Device Letters, vol. 42, no. 1, pp. 86-89, Jan. 2021