晶湛半导体

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晶湛发表的文章
  • Ning Wang, Hui Wang, Xinpeng Lin, Yongle Qi, Lingli Jiang, Elina Lervolino, Kai Cheng, Hongyu Yu
    A study on AlGaN/GaN HEMT characteristics at cryogenic temperatures
    APWS 2017 (Asia-Pacific Workshop on Widegap Semiconductors, 2017). Sep. 2017, Qingdao, China.
  • Kai Liu, Liyang Zhang, Peng Xiang, Hoingjing Huo, Hao Ding, Ni Yin, and Kai Cheng
    Growth and Characterization of AlInN/GaN Heterostructures
    APWS 2017 (Asia-Pacific Workshop on Widegap Semiconductors, 2017). Sep. 2017, Qingdao, China.
  • Hongjing Huo, Kai Liu, and Kai Cheng
    Defect Inspection on GaN-on-SiC wafer
    APWS 2017 (Asia-Pacific Workshop on Widegap Semiconductors, 2017). Sep. 2017, Qingdao, China.
  • Liyang Zhang, Peng Xiang, Kai Liu, Hongjing Huo, Hao Ding, Ni Yin and Kai Cheng
    Thick (6m) n-type GaN-on-Si Epi-Layers for Vertical Power Devices
    CS Mantech 2017 (2017 International Conference on Compound Semiconductor Manufacturing Technology), May, 2017, California, USA.
  • Shuxun Lin, Maojun Wang, Fei Sang, Ming Tao, Cheng P. Wen, Bing Xie, Min Yu, Jinyan Wang, Yilong Hao, Wengang Wu, Jun Xu, Kai Cheng and Bo Shen
    A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices
    IEEE Electron Device Lett. 37, 377 (2016)
  • Peng Xiang, Kai Liu, Hongjing Huo, Lei Feng, Hui Zhang, Hong Zhu, and Kai Cheng
    High Quality AlGaN/GaN HEMT Structures Grown on 200mm Si
    11th International Conference on Nitride Semiconductor). August, 2015, Beijing, China.
  • Peng Xiang, Lei Feng, Kai Liu, Hui Zhang, Hong Zhu, Hongjing Huo, Kai Cheng
    Large Diameter GaN-on-Si Technology for Power Electronics Applications
    2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices. June, 2015. Jeju, Korea.
  • Kai Cheng
    Trimming the thickness of high-voltage GaN-on-Silicon HEMTs
    Compound Semiconductor 21, 36 (2015).