发表论文
我们以开放和协作的方式与世界各地的优秀大学、研究中心和工业合作伙伴合作。 到目前为止，我们已经开发了各种定制的 GaN 外延结构，以满足我们客户和合作伙伴的特定设计。 可以在此处列出的出版物中找到更多详细信息。想与我们讨论您的想法吗？联系邮箱：info@enkris.com。
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Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN
Xiao,Ming;Du,Zhonghao;Xie,Jinqiao;Beam,Edward;Yan,Xiaodong;Cheng,Kai;Wang,Han;Cao,Yu;Zhang,Yuhao;
Appl. Phys. Lett. 116, 053503 (2020)
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Approach to Single-Mode Dominated Resonant Emission in GaN-Based Square Microdisks on Si
Liu,Meng-Han;Chen,Peng;Xie,Zi-Li;Xiu,Xiang-Qian;Chen,Dun-Jun;Liu,Bin;Han,Ping;Shi,Yi;Zhang,Rong;Zheng,You-Dou;Cheng,Kai;Zhang,Liyang;
2020 Chinese Phys. Lett. 37 054204
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High-efficiency photon–electron coupling resonant emission in GaN-based microdisks on Si
Liu,Menghan;Chen,Peng;Xie,Zili;Xiu,Xiangqian;Chen,Dunjun;Liu,Bin;Han,Ping;Shi,Yi;Zhang,Rong;Zheng,Youdou;Cheng,Kai;Zhang,Liyang;
2020 Chinese Physics B 29 084203
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Conformal passivation of Multi-Channel GaN power transistors for reduced current collapse
Nela,Luca;Yildirim,HalilKerim;Erine,Catherine;VanErp,Remco;Xiang,Peng;Cheng,Kai;Matioli,Elison
IEEE Electron Device Letters, vol. 42, no. 1, pp. 86-89, Jan. 2021
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Tri-gate GaN junction HEMT
YunweiMa,MingXiao,ZhonghaoDu,XiaodongYan,KaiCheng,MichaelClavel,MantuK.Hudait,IvanKravchenko,HanWang,andYuhaoZhang
Appl. Phys. Lett. 117, 143506 (2020)
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3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes with P-GaN Termination
MingXiao,YunweiMa,KaiCheng,KaiLiu,AndyXie,EdwardBeam,YuCao,andYuhaoZhang
IEEE Electron Device Letters
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Realization of regular resonance mode in GaN-based polygonal microdisks on Si
MenghanLiu,PengChen,JingZhou,RuXu,XiaokangMao,ZiliXie,XiangqianXiu,DunjunChen,BinLiu,PingHan,YiShi,RongZhang,YoudouZheng,KaiCheng,andLiyangZhang
Journal of Applied Physics 127, 113102 (2020)
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