发表论文
我们以开放和协作的方式与世界各地的优秀大学、研究中心和工业合作伙伴合作。 到目前为止，我们已经开发了各种定制的 GaN 外延结构，以满足我们客户和合作伙伴的特定设计。 可以在此处列出的出版物中找到更多详细信息。想与我们讨论您的想法吗？联系邮箱：info@enkris.com。
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720V/0.35mΩ·cm2 Fully-Vertical GaN-on-Si Power Diodes by Selective Removal of Si substrates and buffer layers
YuhaoZhang,MengyangYuan,NadimChowdhury,KaiCheng,andTomasPalacios
IEEE Electron Device Letters, 39(5), 715-718 (2018)
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Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance
JunMa,CatherineErine,PengXiang,KaiCheng,andElisonMatioli
Appl. Phys. Lett. 113, 242102 (2018)
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Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors
NingXu,RonghuiHao,FuChen,XiaodongZhang,HuiZhang,PeipeiZhang2,XiaoyuDing,LiangSong,GuohaoYu,KaiCheng,YongCaiandBaoshunZhang
Appl. Phys. Lett. 113, 152104 (2018)
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Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy
TianLiDuan,JiShengPan,NingWang,KaiCheng&HongYuYu
Nanoscale Research Letters volume 12, 499 (2017)
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The Growth Technology of High-Voltage GaN on Silicon
PengXiang,LiyangZhang,KaiCheng
Gallium Nitride Power Devices; Edited By Hongyu Yu, Tianli Duan, Jenny Stanford Publishing
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Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature
NingWang,HuiWang,XinpengLin,YongleQi,TianliDuan,LingliJiang,ElinaIervolino,KaiChengandHongyuYu
AIP Advances 7, 095317 (2017)
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A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices
ShuxunLin,MaojunWang,FeiSang,MingTao,ChengP.Wen,BingXie,MinYu,JinyanWang,YilongHao,WengangWu,JunXu,KaiCheng,andBoShen
IEEE Electron Device Lett. 37, 377 (2016)
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