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我们以开放和协作的方式与世界各地的优秀大学、研究中心和工业合作伙伴合作。 到目前为止，我们已经开发了各种定制的 GaN 外延结构，以满足我们客户和合作伙伴的特定设计。 可以在此处列出的出版物中找到更多详细信息。想与我们讨论您的想法吗？联系邮箱：info@enkris.com。
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p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si
NadimChowdhury,JoriLemettinen,QingyunXie,YuhaoZhang,NitulS.Rajput,PengXiang,KaiCheng,SamiSuihkonen,HanWuiThenandTomásPalacio
IEEE Electron Device Letters, 40(7), 1036 (2019)
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Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance
JunMa;GeorgiosKampitsis;PengXiang;KaiCheng;ElisonMatioli
IEEE Electron Device Letters, 40(2), 275 (2019)
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Evaluation of LPCVD SiNx Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-based AlGaN/GaN MIS-HEMT
YongleQi,YumengZhu,JiangZhang,XinpengLin,KaiCheng,LingliJiang,HongyuYu
IEEE Transactions on Electron Devices, 65(5), 1759-1764 (2018)
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Characterization of 880 V Normally-OFF GaN MOSHEMT on Silicon Substrate Fabricated with a Plasma-Free, Self-Terminated Gate Recess Process
MingTao,ShaofeiLiu,BingXie,ChengP.Wen,JinyanWang,YilongHao,WengangWu,KaiCheng,BoShen,MaojunWang
IEEE Transactions on Electron Devices, 65(4), 1453-1457 (2018)
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Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT
RonghuiHao,NingXu,GuohaoYu,LiangSong,FuChen,JieZhao,XuguangDeng,XiangLi,KaiCheng,KaiFu,YongCai,XinpingZhang,andBaoshunZhang
IEEE Transactions on Electron Devices, 65(4), 1314-1320 (2018)
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10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current
RonghuiHao,DongdongWu,KaiFu,LiangSong,FuChen,JieZhao,ZhongkaiDu,BingliangZhang,QilongWang,GuohaoYu,KaiCheng,YongCai,XinpingZhang,BaoshunZhang
Electronics Letters, 54 (13), 848 (2018)
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820 V GaN-on-Si Quasi-Vertical P-i-N Diodes with BFOM of 2.0 GW/cm2
R.A.Khadar,C.Liu,L.Zhang,P.Xiang,K.Cheng,andE.Matioli
IEEE Electron Device Letters, 39(3), 401 – 404 (2018)
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